PART |
Description |
Maker |
2SK2219 1026 2SK2219-21 2SK2219-23 |
1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用(应用于电容器话筒沟道结型场效应管 From old datasheet system N-Channel Junction Silicon FET
|
Sanyo Electric Co., Ltd.
|
2SK2141 K2141 2SK2141JM |
N-channel enhancement type DMOS FET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
PHD22NQ20T-01 PHD22NQ20T |
N-channel TrenchMOS standard level FET N-channel TrenchMOS standard level FET 21.1 A, 200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 N-channel TrenchMOS?? standard level FET N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH From old datasheet system
|
NEC[NEC]
|
PHP160NQ08T PHB160NQ08T |
CAP 0.1UF 100V 10% X7R AXIAL TR-14 75 A, 75 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET N-channel TrenchMOS standard level FET N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BUK9Y19-55B |
N-channel TrenchMOSlogic level FET N-channel TrenchMOS⑩ logic level FET N-channel Trenchmos (tm) logic level FET
|
PHILIPS[Philips Semiconductors]
|
MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|